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 HD1760JL
Very high voltage NPN power transistor for high definition and slim CRT display
Features

State-of-the-art technology: diffused collector "enhanced generation" EHVS1 Wide range of optimum drive conditions Stable performance versus operating temperature variation
3
Applications
High-definition and slim CRT TV and monitors
1
2
Description
The HD1760JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Structure 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
TO-264
Internal schematic diagram
Table 1.
Device summary
Marking HD1760JL Package TO-264 Packaging Tube
Part number HD1760JL
June 2007
Rev 3
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www.st.com 10
Electrical ratings
HD1760JL
1
Electrical ratings
Table 2.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ
Absolute maximum rating
Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitte-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25C Storage temperature Max. operating junction temperature Value 1700 800 10 36 54 18 27 200 -55 to 150 150 Unit V V V A A A A W C C
Table 3.
Symbol RthJC
Thermal data
Parameter Thermal resistance junction case______________Max Value 0.625 Unit C/W
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HD1760JL
Electrical characteristics
2
Electrical characteristics
(TCASE = 25C; unless otherwise specified) Table 4.
Symbol ICES IEBO VCEO(sus)(1) VEBO VCE(sat) (1) VBE(sat) (1) hFE
Electrical characteristics
Parameter Collector cut-off current (VBE = 0) Emitter cut-off current (IC = 0) Collector-emitter sustaining voltage (IB = 0) Emitter-base voltage (IC = 0) Test conditions VCE = 1700V VCE = 1700V___TC = 125C VEB = 5V IC = 10mA IE = 10mA IB = 4.5A IB = 4.5A _ VCE = 5V VCE = 5V 30 5 8.5 800 10 2 1.5 Min. Typ. Max. 0.2 2 10 Unit mA mA A V V V V
Collector-emitter saturation IC = 18A _____ voltage Base-emitter saturation voltage DC current gain IC = 18A _____ IC = 2A ____ IC = 18A ____
ts tf
Inductive load Storage time Fall time
IC = 12A _ __ fh = 32 KHz _IB(off) = -6.9A IB(on) = 1A VCE(fly) = 1340V VBE(off) = -2.7V LBB(on) = 0.8H ___ fh = 100kHz IC = 8A IB(on) = 1.3A IB(off) = -5.8A VCE(fly) = 1300V VBE(off) = -2.7V LBB(on) = 0.25H
2.6 300
s ns
ts tf
Inductive load Storage time Fall time
2 110
s ns
1. Pulsed duration = 300 ms, duty cycle 1.5%.
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Electrical characteristics
HD1760JL
2.1
Electrical characteristics (curve)
Figure 1. Safe operating area Figure 2. Derating curve
Figure 3.
Output characteristics
Figure 4.
Reverse biased SOA
Figure 5.
DC current gain
Figure 6.
DC current gain
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HD1760JL Figure 7. Collector-emitter saturation voltage Figure 8.
Electrical characteristics Base-emitter saturation voltage
Figure 9.
Power losses
Figure 10. Power losses
Figure 11. Inductive load switching time Figure 12. Inductive load switching time
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Test circuit
HD1760JL
3
Test circuit
Figure 13. Power losses and inductive load switching test circuit
Figure 14. Reverse biased safe operating area test circuit
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HD1760JL
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data Table 5. TO-264 mechanical data
HD1760JL
Figure 15. TO-264 drawing
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HD1760JL
Revision history
5
Revision history
Table 6.
Date 17-Oct-2005 03-Nov-2005 14-Jun-2007
Revision history
Revision 1 2 3 Initial release. hFE value has been changed on Table 4 Complete version: new Section 2.1 inserted Changes
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HD1760JL
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